Samsung plans record-breaking 400-layer NAND chip that could be key to breaking 200TB barrier for ultra large capacity AI hyperscaler SSDs
SMRTR summary
Samsung is developing a 400-layer vertical NAND flash chip for AI data centers, set to launch by 2026. The new BV NAND technology aims to boost density and minimize heat, with plans to reach 1,000 layers by 2030, potentially enabling 200TB SSDs for AI applications while improving energy efficiency.
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