World’s fastest memory writes 25 billion bits per sec, 10,000× faster than current tech
SMRTR summary
The PoX memory device, developed at Fudan University, writes data 10,000 times faster than flash memory, offering ultra-fast, energy-efficient performance that could eliminate AI hardware bottlenecks and enable new computing and mobile applications.
SMRTR provides this summary for quick context. The original article belongs to Interesting Engineering.
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