US lab to explore ‘beyond EUV’ lithography to produce powerful semiconductors faster
SMRTR summary
Lawrence Livermore National Laboratory is developing a new laser system called Big Aperture Thulium (BAT) to advance extreme ultraviolet lithography for semiconductor manufacturing. The BAT laser aims to increase EUV source efficiency by 10 times compared to current CO2 lasers, potentially enabling smaller, more powerful chips that are faster to produce and use less electricity.
SMRTR provides this summary for quick context. The original article belongs to Interesting Engineering.
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