RAM it up: New magnetic memory slashes write power by 35% at record speed

Japanese researchers have developed a spin-orbit torque magnetoresistive random-access memory (SOT-MRAM) device with the world's lowest write power. The team at Tohoku University reduced write power by 35% while maintaining high stability and performance. They achieved a record low write power of 156 femtojoules in devices with a 75-degree canted magnetization angle. This breakthrough addresses key challenges in SOT-MRAM technology, potentially enabling more energy-efficient and high-speed memory solutions for future electronics and computing systems.