Broken atomic bonds unlock next-gen semiconductors with 100x conductivity boost
SMRTR summary
Engineers at the University of Michigan have discovered why wurtzite ferroelectric nitride semiconductors remain stable despite opposing electric polarizations. They found that broken atomic bonds at polarization collision points provide charge balance, acting like atomic glue. These materials offer 100x higher conductivity than typical gallium nitride transistors, potentially enabling more efficient electronics and sensors.
SMRTR provides this summary for quick context. The original article belongs to Interesting Engineering.
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