Breakthrough 3D NAND flash etching technique could turbocharge SSD production
SMRTR summary
A new plasma-based etching process doubles the rate of manufacturing 3D NAND flash memory chips, potentially leading to denser data storage in electronic devices. The technique, using cryogenic hydrogen fluoride plasma, increases the etching rate from 310 to 640 nanometers per minute and could help overcome manufacturing hurdles for 400-layer memory technology.
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